 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery/ No forward recovery * No temperature influence on the switching behavior * High surge current capability * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC for target applications * Breakdown voltage tested at 5mA2) 1) Product Summary V DC Qc IF 600 8 4 V nC A PG-TO252 3 1 thinQ! 2G Diode specially designed for fast switching applications like: * CCM PFC * Motor Drives Type IDD04S60C Package PG-TO252 Marking D04S60C Pin 1 n.c. Pin 2 A 2 Pin 3 C Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<130 C f =50 Hz T C=25 C, t p=10 ms T j=150 C, T C=100 C, D =0.1 T C=25 C, t p=10 s T C=25 C, t p=10 ms Value 4 5.6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature I F,RM I F,max i 2dt V RRM dv/ dt P tot T j, T stg 18 132 5.1 600 A2s V V/ns W C V R = 0....480V T C=25 C 50 37 -55 ... 175 Rev. 2.0 page 1 2006-04-03 IDD04S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJA R thJC SMD version, device on PCB, minmal footprint SMD Version, device on PCB, 6 cm2 cooling3) reflow MSL 3 4.1 75 K/W Values typ. max. Unit - - 50 260 C Soldering temperature reflowsoldering Tsold Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 mA I F=4 A, T j=25 C I F=4 A, T j=150 C Reverse current IR V R=600 V, T j=25 C V R=600 V, T j=150 C AC characteristics Total capacitive charge Switching time4) Qc tc C V R=400 V,I FI F,max, di F/dt =200 A/s, T j=150 C V R=1 V, f = MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 1) 2) 3) 600 - 1.7 2 0.5 2 1.9 2.4 50 500 V A - 8 130 20 20 <10 - nC ns pF J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms at 5 mA. Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. PCB is vertikal with out blown air. tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 5) 4) Only capacitive charge occuring, guaranteed by design. page 2 2006-04-03 Rev. 2.0 IDD04S60C 1 Power dissipation P tot=f(T C) parameter: RthJC(max) 40 2 Diode forward current I F=f(T C); T j175 C parameter: R thJC(max); V F(max) 9 8 7 6 35 30 25 P tot [W] 20 I F [A] 5 4 3 15 10 2 1 0 25 50 75 100 125 150 175 200 25 50 75 100 125 150 175 200 5 0 T C [C] T C [C] 3 Typ. forward characteristic I F=f(V F); t p=400 s parameter: T j 8 -55C 150C 25C 100C 4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 s; parameter: Tj 40 175C 150C 7 6 IF IF 30 5 IF [A] IF [A] 4 20 -55C 3 175C 25C 2 10 100C 1 0 0 1 2 3 4 0 0 2 4 6 8 10 VF[V] VF[V] Rev. 2.0 page 3 2006-04-03 IDD04S60C 5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 C, parameter: D =t p/T 20 0.1 0.2 0.5 1 6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j 101 18 16 14 175 C 100 P F(AV) [W] 12 10-1 I R [A] 10 8 6 150 C 100 C 10-2 25 C -55 C 4 2 0 0 2 4 6 8 10-3 10-4 100 200 300 400 500 600 I F(AV) [A] V R [V] 7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 C, f =1 MHz 200 175 0.5 150 100 0.2 0.1 125 Z thJC [K/W] C [pF] 10-4 10-3 10-2 10-1 100 0.05 10-1 0.02 75 50 single pulse 25 10-2 10-5 0 10-1 100 101 102 103 t P [s] VR [V] Rev. 2.0 page 4 2006-04-03 IDD04S60C 9 Typ. C stored energy E C=f(V R) 10 Typ. capacitance charge vs. current slope Q C=f(di F/dt )5); T j=150 C; I FI F,max 3.5 10 3.0 8 2.5 6 1.5 Q c [nC] 4 2 0 0 100 200 300 400 500 600 100 400 700 1000 E c [C] 2.0 1.0 0.5 0.0 V R [V] di F/dt [A/s] Rev. 2.0 page 5 2006-04-03 IDD04S60C Package Outline:PG-TO252-3-1/TO252-3-11/TO252-3-21 Dimensions in mm/inches: Rev. 2.0 page 6 2006-04-03 IDD04S60C Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2006-04-03 |
Price & Availability of IDD04S60C
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |